ERROR DETECTING AND CORRECTING MEMORY AS A COUNTERMEASURE FOR SINGLE EVENT UPSET

Year
2002
Author(s)
M. Farnitano - Brookhaven National Laboratory
J. Whichello - International Atomic Energy Agency
M. Ondrik - Aquila Technologies Group, Inc.
Abstract
Error Detection and Correction (EDAC) for computer memories* has been routinely used for decades in the space program and in commercial computers to counter the effects of Single Event Upset (SEU) on semiconductor memories. This technology is quite mature and can be inexpensively applied in new Safeguards instruments as a countermeasure to neutron induced SEU, thereby dramatically improving the inherent reliability of those instruments.